- 1.8--150 MHz, 1000 W, 50 V
LATERAL N--CHANNEL
BROADBAND
RF POWER MOSFETs - CASE 375D--05
STYLE 1
NI--1230--4
MRF6VP11KHR6 - RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed primarily for pulse wideband applications with frequencies up to
150 MHz. Devices are unmatched and are suitable for use in industrial,
medical and scientific applications.
• Typical Pulse Performance at 130 MHz: VDD = 50 Volts, IDQ = 150 mA,
Pout = 1000 Watts Peak (200 W Avg.), Pulse Width = 100 μsec,
Duty Cycle = 20%
Power Gain 26 dB
Drain Efficiency 71%
• Capable of Handling 10:1 VSWR, @ 50 Vdc, 130 MHz, 1000 Watts Peak
Power
Features
• Characterized with Series Equivalent Large--Signal Impedance Parameters
• CW Operation Capability with Adequate Cooling
• Qualified Up to a Maximum of 50 VDD Operation
• Integrated ESD Protection
• Designed for Push--Pull Operation
• Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
• In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13 inch Reel.