- RF Power Field--Effect Transistors
- N--Channel Enhancement--
- Mode Lateral MOSFETs
- Designed primarily for CW large--signal output and driver applications with frequencies up to 450 MHz.
- Devices are unmatched and are suitable for use in industrial, medical and scientific applications. •
- Typical CW Performance at 220 MHz: VDD = 50 Volts, IDQ = 450 mA, Pout = 150 Watts
- Power Gain ó 25 dB Drain Efficiency ó 68.3%
- • Capable of Handling 10:1 VSWR, @ 50 Vdc, 220 MHz, 150 Watts CW Output Power
- Features • Characterized with Series Equivalent Large--Signal Impedance
- Parameters • Qualified Up to a Maximum of 50 VDD Operation
- • Integrated ESD Protection • 225°C Capable Plastic Package
- • RoHS Compliant • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.